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Microsemi Corporation 2N918UB technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) | |
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 3-SMD, No Lead | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 15V | |
| Number of Elements | 1 Element | |
| Operating Temperature | -65°C~200°C TJ | |
| Packaging | Bulk | |
| Published | 2007 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN LEAD |
| Свойство продукта | Значение свойства | |
|---|---|---|
| HTS Code | 8541.21.00.95 | |
| Max Power Dissipation | 200mW | |
| Terminal Position | DUAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-XDSO-N3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Power - Max | 200mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 400mV | |
| Max Collector Current | 50mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 3mA 1V | |
| Current - Collector Cutoff (Max) | 1μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 1mA, 10mA | |
| Collector Base Voltage (VCBO) | 30V | |
| RoHS Status | Non-RoHS Compliant |