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APT100GN60LDQ4G Технические параметры

Microsemi Corporation  APT100GN60LDQ4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 25 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Weight 10.6g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 100A, 1 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Voltage - Rated DC 600V
Max Power Dissipation 625W
Current Rating 100A
Pin Count 3
Свойство продукта Значение свойства
JESD-30 Code R-PSFM-T3
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 229A
Turn On Time 96 ns
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 100A
Continuous Collector Current 229A
Turn Off Time-Nom (toff) 435 ns
IGBT Type Trench Field Stop
Gate Charge 600nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 31ns/310ns
Switching Energy 4.75mJ (on), 2.675mJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6.5V
Height 5.21mm
Length 26.49mm
Width 20.5mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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