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APT15GP90BDQ1G Технические параметры
Microsemi Corporation APT15GP90BDQ1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 900V | |
| Number of Elements | 1 Element | |
| Test Conditions | 600V, 15A, 4.3 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | POWER MOS 7® | |
| Published | 1999 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | TIN SILVER COPPER | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Voltage - Rated DC | 900V | |
| Max Power Dissipation | 250W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | 43A | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 900V | |
| Max Collector Current | 43A | |
| JEDEC-95 Code | TO-247AD | |
| Turn On Time | 23 ns | |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 15A | |
| Turn Off Time-Nom (toff) | 170 ns | |
| IGBT Type | PT | |
| Gate Charge | 60nC | |
| Current - Collector Pulsed (Icm) | 60A | |
| Td (on/off) @ 25°C | 9ns/33ns | |
| Switching Energy | 200μJ (off) | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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