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APT25GN120BG Технические параметры

Microsemi Corporation  APT25GN120BG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 800V, 25A, 1 Ω, 15V
Turn Off Delay Time 280 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature HIGH RELIABILITY
Voltage - Rated DC 1.2kV
Max Power Dissipation 272W
Current Rating 67A
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSFM-T3
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 22 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 67A
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 39 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 25A
Turn Off Time-Nom (toff) 560 ns
IGBT Type Trench Field Stop
Gate Charge 155nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C 22ns/280ns
Switching Energy 2.15μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Просмотр сходства
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