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APT25GT120BRG Технические параметры

Microsemi Corporation  APT25GT120BRG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 800V, 25A, 5 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series Thunderbolt IGBT®
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 1.2kV
Max Power Dissipation 347W
Current Rating 54A
Pin Count 3
Свойство продукта Значение свойства
JESD-30 Code R-PSFM-T3
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 54A
JEDEC-95 Code TO-247AA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 41 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 25A
Continuous Collector Current 54A
Turn Off Time-Nom (toff) 220 ns
IGBT Type NPT
Gate Charge 170nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C 14ns/150ns
Switching Energy 930μJ (on), 720μJ (off)
Height 5.31mm
Length 21.46mm
Width 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Просмотр сходства
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