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APT27GA90BD15 Технические параметры

Microsemi Corporation  APT27GA90BD15 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 33 Weeks
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Transistor Element Material SILICON
Test Conditions 600V, 14A, 10 Ω, 15V
Number of Elements 1 Element
Collector-Emitter Breakdown Voltage 900V
Published 1999
Packaging Tube
Operating Temperature -55°C~150°C TJ
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 223W
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSFM-T3
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 223W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 900V
Max Collector Current 48A
JEDEC-95 Code TO-247AD
Turn On Time 18 ns
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 14A
Turn Off Time-Nom (toff) 281 ns
IGBT Type PT
Gate Charge 62nC
Current - Collector Pulsed (Icm) 79A
Td (on/off) @ 25°C 9ns/98ns
Switching Energy 413μJ (on), 287μJ (off)
RoHS Status RoHS Compliant
Radiation Hardening No

APT27GA90BD15 Документы

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