Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
APT34M120J Технические параметры
Microsemi Corporation APT34M120J technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Lifecycle Status | IN PRODUCTION (Last Updated: 4 weeks ago) | |
| Factory Lead Time | 18 Weeks | |
| Mount | Chassis Mount, Screw | |
| Mounting Type | Chassis Mount | |
| Package / Case | SOT-227-4, miniBLOC | |
| Number of Pins | 4Pins | |
| Weight | 30.000004g | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 35A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 960W Tc | |
| Turn Off Delay Time | 315 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 1997 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, UL RECOGNIZED | |
| Voltage - Rated DC | 1.2kV | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Current Rating | 34A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 4 | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 960W | |
| Case Connection | ISOLATED | |
| Turn On Delay Time | 100 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 300m Ω @ 25A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 18200pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 560nC @ 10V | |
| Rise Time | 60ns | |
| Drain to Source Voltage (Vdss) | 1200V | |
| Vgs (Max) | ±30V | |
| Fall Time (Typ) | 90 ns | |
| Continuous Drain Current (ID) | 35A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain-source On Resistance-Max | 0.29Ohm | |
| Avalanche Energy Rating (Eas) | 2700 mJ | |
| Height | 9.6mm | |
| Length | 38.2mm | |
| Width | 25.4mm | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
APT34M120J Документы
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ