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APT35GA90BD15 Технические параметры

Microsemi Corporation  APT35GA90BD15 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 32 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 [B]
Collector-Emitter Breakdown Voltage 900V
Current-Collector (Ic) (Max) 63A
Test Conditions 600V, 18A, 10Ohm, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Свойство продукта Значение свойства
Min Operating Temperature -55°C
Max Power Dissipation 290W
Element Configuration Single
Input Type Standard
Power - Max 290W
Collector Emitter Voltage (VCEO) 900V
Max Collector Current 63A
Voltage - Collector Emitter Breakdown (Max) 900V
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 18A
IGBT Type PT
Gate Charge 84nC
Current - Collector Pulsed (Icm) 105A
Td (on/off) @ 25°C 12ns/104ns
Switching Energy 642μJ (on), 382μJ (off)
Radiation Hardening No
RoHS Status RoHS Compliant
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APT35GA90BD15 Документы

APT35GA90BD15 brand manufacturers: Microsemi Corporation, Anli stock, APT35GA90BD15 reference price.Microsemi Corporation. APT35GA90BD15 parameters, APT35GA90BD15 Datasheet PDF and pin diagram description download.You can use the APT35GA90BD15 Transistors - IGBTs - Single, DSP Datesheet PDF, find APT35GA90BD15 pin diagram and circuit diagram and usage method of function,APT35GA90BD15 electronics tutorials.You can download from the Anli.