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APT35GN120BG Технические параметры
Microsemi Corporation APT35GN120BG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Factory Lead Time | 24 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Weight | 38.000013g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Number of Elements | 1 Element | |
| Test Conditions | 800V, 35A, 2.2 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 1999 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Additional Feature | HIGH RELIABILITY | |
| Voltage - Rated DC | 1.2kV | |
| Max Power Dissipation | 379W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Current Rating | 94A | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 1.2kV | |
| Max Collector Current | 94A | |
| JEDEC-95 Code | TO-247AD | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Turn On Time | 46 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 35A | |
| Continuous Collector Current | 94A | |
| Turn Off Time-Nom (toff) | 465 ns | |
| IGBT Type | NPT, Trench Field Stop | |
| Gate Charge | 220nC | |
| Current - Collector Pulsed (Icm) | 105A | |
| Td (on/off) @ 25°C | 24ns/300ns | |
| Switching Energy | 2.315mJ (off) | |
| Gate-Emitter Voltage-Max | 30V | |
| Gate-Emitter Thr Voltage-Max | 6.5V | |
| Height | 5.31mm | |
| Length | 21.46mm | |
| Width | 16.26mm | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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