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APT40GT60BRG Технические параметры

Microsemi Corporation  APT40GT60BRG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2V
Number of Elements 1 Element
Test Conditions 400V, 40A, 5 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series Thunderbolt IGBT®
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Voltage - Rated DC 600V
Max Power Dissipation 345W
Свойство продукта Значение свойства
Current Rating 80A
Pin Count 3
JESD-30 Code R-PSFM-T3
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Turn On Time 63 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Continuous Collector Current 80A
Turn Off Time-Nom (toff) 353 ns
IGBT Type NPT
Gate Charge 200nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 12ns/124ns
Switching Energy 828μJ (off)
Height 5.31mm
Length 21.46mm
Width 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

APT40GT60BRG Документы

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