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APT50GR120JD30 Технические параметры
Microsemi Corporation APT50GR120JD30 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ||
| Lifecycle Status | IN PRODUCTION (Last Updated: 2 days ago) | |
| Factory Lead Time | 22 Weeks | |
| Mount | Chassis Mount | |
| Mounting Type | Chassis Mount | |
| Package / Case | SOT-227-4 | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~150°C TJ | |
| Published | 2001 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 417W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Configuration | Single | |
| Power - Max | 417W | |
| Input | Standard | |
| Collector Emitter Voltage (VCEO) | 3.2V | |
| Max Collector Current | 84A | |
| Current - Collector Cutoff (Max) | 1.1mA | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Input Capacitance | 5.55nF | |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 50A | |
| IGBT Type | NPT | |
| NTC Thermistor | No | |
| Gate-Emitter Voltage-Max | 30V | |
| Input Capacitance (Cies) @ Vce | 5.55nF @ 25V | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
APT50GR120JD30 Документы
- DatasheetsAPT50GR120JD30
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