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APT50GT60BRDQ2G Технические параметры

Microsemi Corporation  APT50GT60BRDQ2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 25 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2V
Number of Elements 1 Element
Test Conditions 400V, 50A, 5 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series Thunderbolt IGBT®
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 600V
Max Power Dissipation 446W
Current Rating 110A
Pin Count 3
Свойство продукта Значение свойства
JESD-30 Code R-PSFM-T3
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 110A
Reverse Recovery Time 22 ns
Turn On Time 46 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A
Continuous Collector Current 110A
Turn Off Time-Nom (toff) 365 ns
IGBT Type NPT
Gate Charge 240nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 14ns/240ns
Switching Energy 995μJ (on), 1070μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 5V
Height 5.31mm
Length 21.46mm
Width 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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APT50GT60BRDQ2G Документы

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