Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
APT53F80J Технические параметры
Microsemi Corporation APT53F80J technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) | |
| Factory Lead Time | 33 Weeks | |
| Mount | Chassis Mount, Screw | |
| Mounting Type | Chassis Mount | |
| Package / Case | SOT-227-4, miniBLOC | |
| Number of Pins | 4Pins | |
| Weight | 30.000004g | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 57A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 960W Tc | |
| Turn Off Delay Time | 435 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | POWER MOS 8™ | |
| Published | 1997 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Voltage - Rated DC | 800V | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | 53A | |
| Pin Count | 4 | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 960W | |
| Case Connection | ISOLATED | |
| Turn On Delay Time | 100 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 110m Ω @ 43A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 5mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 17550pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 570nC @ 10V | |
| Rise Time | 145ns | |
| Vgs (Max) | ±30V | |
| Fall Time (Typ) | 125 ns | |
| Continuous Drain Current (ID) | 57A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Pulsed Drain Current-Max (IDM) | 325A | |
| Avalanche Energy Rating (Eas) | 3725 mJ | |
| Height | 9.6mm | |
| Length | 38.2mm | |
| Width | 25.4mm | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ