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APT6025BVRG Технические параметры
Microsemi Corporation APT6025BVRG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Lifecycle Status | IN PRODUCTION (Last Updated: 4 weeks ago) | |
| Factory Lead Time | 5 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247 [B] | |
| Current - Continuous Drain (Id) @ 25℃ | 25A Tc | |
| Number of Elements | 1 Element | |
| Turn Off Delay Time | 55 ns | |
| Packaging | Tube | |
| Series | POWER MOS V® | |
| Published | 1997 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Voltage - Rated DC | 600V | |
| Current Rating | 25A | |
| Power Dissipation | 370W | |
| Turn On Delay Time | 14 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 5160pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 275nC @ 10V | |
| Rise Time | 12ns | |
| Drain to Source Voltage (Vdss) | 600V | |
| Fall Time (Typ) | 10 ns | |
| Continuous Drain Current (ID) | 25A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Input Capacitance | 5.16nF | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
APT6025BVRG Документы
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