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APT60GF120JRDQ3 Технические параметры
Microsemi Corporation APT60GF120JRDQ3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ||
| Factory Lead Time | 29 Weeks | |
| Mount | Chassis Mount, Screw | |
| Mounting Type | Chassis Mount | |
| Package / Case | ISOTOP | |
| Number of Pins | 4Pins | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~150°C TJ | |
| Published | 1999 | |
| Pbfree Code | no | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Voltage - Rated DC | 1.2kV | |
| Max Power Dissipation | 625W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | 115A | |
| Configuration | Single | |
| Power - Max | 625W | |
| Input | Standard | |
| Collector Emitter Voltage (VCEO) | 1.2kV | |
| Max Collector Current | 149A | |
| Current - Collector Cutoff (Max) | 350μA | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Input Capacitance | 7.08nF | |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 100A | |
| IGBT Type | NPT | |
| NTC Thermistor | No | |
| Gate-Emitter Voltage-Max | 30V | |
| Input Capacitance (Cies) @ Vce | 7.08nF @ 25V | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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