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APT7F120B Технические параметры

Microsemi Corporation  APT7F120B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 22 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 7A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 335W Tc
Turn Off Delay Time 45 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Resistance 2.4Ohm
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Voltage - Rated DC 1.2kV
Terminal Position SINGLE
Current Rating 6.6A
Pin Count 3
Свойство продукта Значение свойства
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 335W
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.9 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2565pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 8ns
Drain to Source Voltage (Vdss) 1200V
Vgs (Max) ±30V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 7A
JEDEC-95 Code TO-247AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 7A
Pulsed Drain Current-Max (IDM) 28A
Avalanche Energy Rating (Eas) 575 mJ
Height 5.31mm
Length 21.46mm
Width 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

APT7F120B Документы

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