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APT80GA60B Технические параметры

Microsemi Corporation  APT80GA60B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 33 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2V
Number of Elements 1 Element
Test Conditions 400V, 47A, 4.7 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish PURE MATTE TIN
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 625W
Pin Count 3
JESD-30 Code R-PSFM-T3
Свойство продукта Значение свойства
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 143A
JEDEC-95 Code TO-247AD
Turn On Time 52 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 47A
Continuous Collector Current 143A
Turn Off Time-Nom (toff) 326 ns
IGBT Type PT
Gate Charge 230nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 23ns/158ns
Switching Energy 840μJ (on), 751μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6V
Height 21.46mm
Length 16.26mm
Width 5.31mm
Radiation Hardening No
RoHS Status RoHS Compliant
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APT80GA60B Документы

APT80GA60B brand manufacturers: Microsemi Corporation, Anli stock, APT80GA60B reference price.Microsemi Corporation. APT80GA60B parameters, APT80GA60B Datasheet PDF and pin diagram description download.You can use the APT80GA60B Transistors - IGBTs - Single, DSP Datesheet PDF, find APT80GA60B pin diagram and circuit diagram and usage method of function,APT80GA60B electronics tutorials.You can download from the Anli.