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APT80GA60LD40 Технические параметры

Microsemi Corporation  APT80GA60LD40 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 33 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Weight 10.6g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2V
Number of Elements 1 Element
Test Conditions 400V, 47A, 4.7 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series POWER MOS 8™
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 625W
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSFM-T3
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 143A
Reverse Recovery Time 22 ns
Turn On Time 52 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 47A
Continuous Collector Current 143A
Turn Off Time-Nom (toff) 326 ns
IGBT Type PT
Gate Charge 230nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 23ns/158ns
Switching Energy 840μJ (on), 751μJ (off)
Height 5.21mm
Length 26.49mm
Width 20.5mm
Radiation Hardening No
RoHS Status RoHS Compliant

APT80GA60LD40 Документы

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