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APT9M100B Технические параметры
Microsemi Corporation APT9M100B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 22 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 9A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 335W Tc | |
| Turn Off Delay Time | 40 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | POWER MOS 8™ | |
| Published | 1997 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | TIN SILVER COPPER | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Voltage - Rated DC | 1kV | |
| Terminal Position | SINGLE | |
| Current Rating | 9A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 335W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 12 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 1.4 Ω @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2605pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V | |
| Rise Time | 11ns | |
| Drain to Source Voltage (Vdss) | 1000V | |
| Vgs (Max) | ±30V | |
| Fall Time (Typ) | 10 ns | |
| Continuous Drain Current (ID) | 9A | |
| JEDEC-95 Code | TO-247AD | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain Current-Max (Abs) (ID) | 9A | |
| Pulsed Drain Current-Max (IDM) | 37A | |
| Avalanche Energy Rating (Eas) | 575 mJ | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
APT9M100B Документы
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