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APTC60HM35T3G Технические параметры

Microsemi Corporation  APTC60HM35T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 3Pins
Transistor Element Material SILICON
Number of Elements 4 Elements
Turn Off Delay Time 283 ns
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 416W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X25
Свойство продукта Значение свойства
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 416W
Case Connection ISOLATED
Turn On Delay Time 21 ns
FET Type 4 N-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 72A, 10V
Vgs(th) (Max) @ Id 3.9V @ 5.4mA
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 518nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 600V
Fall Time (Typ) 84 ns
Continuous Drain Current (ID) 72A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 200A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Height 11.5mm
Length 73.4mm
Width 40.8mm
Radiation Hardening No
RoHS Status RoHS Compliant

APTC60HM35T3G Документы

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