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APTC60TDUM35PG Технические параметры
Microsemi Corporation APTC60TDUM35PG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) | |
| Factory Lead Time | 36 Weeks | |
| Mount | Chassis Mount, Screw | |
| Mounting Type | Chassis Mount | |
| Package / Case | SP6 | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 6 Elements | |
| Turn Off Delay Time | 283 ns | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Bulk | |
| Published | 2006 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 21Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN SILVER COPPER | |
| Additional Feature | AVALANCHE RATED | |
| Max Power Dissipation | 416W | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 21 | |
| JESD-30 Code | R-XUFM-X21 | |
| Configuration | 3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 416W | |
| Case Connection | ISOLATED | |
| Turn On Delay Time | 21 ns | |
| FET Type | 6 N-Channel (3-Phase Bridge) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 35m Ω @ 72A, 10V | |
| Vgs(th) (Max) @ Id | 3.9V @ 5.4mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 518nC @ 10V | |
| Rise Time | 30ns | |
| Drain to Source Voltage (Vdss) | 600V | |
| Fall Time (Typ) | 84 ns | |
| Continuous Drain Current (ID) | 72A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain-source On Resistance-Max | 0.035Ohm | |
| Pulsed Drain Current-Max (IDM) | 200A | |
| Avalanche Energy Rating (Eas) | 1800 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
APTC60TDUM35PG Документы
- DatasheetsPower Products Catalog APTC60TDUM35PG
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