[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

APTC80H29T1G Технические параметры

Microsemi Corporation  APTC80H29T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 1Pin
Transistor Element Material SILICON
Number of Elements 4 Elements
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12Terminations
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 156W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 12
Qualification Status Not Qualified
Configuration COMPLEX
Operating Mode ENHANCEMENT MODE
Power Dissipation 156W
Case Connection ISOLATED
FET Type 4 N-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 290m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2254pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Drain to Source Voltage (Vdss) 800V
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.29Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 670 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status RoHS Compliant
Просмотр сходства

APTC80H29T1G Документы

APTC80H29T1G brand manufacturers: Microsemi Corporation, Anli stock, APTC80H29T1G reference price.Microsemi Corporation. APTC80H29T1G parameters, APTC80H29T1G Datasheet PDF and pin diagram description download.You can use the APTC80H29T1G Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find APTC80H29T1G pin diagram and circuit diagram and usage method of function,APTC80H29T1G electronics tutorials.You can download from the Anli.