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APTGL60DDA120T3G Технические параметры
Microsemi Corporation APTGL60DDA120T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ||
| Factory Lead Time | 36 Weeks | |
| Mount | Chassis Mount, Screw | |
| Mounting Type | Chassis Mount | |
| Package / Case | SP3 | |
| Number of Pins | 16Pins | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Number of Elements | 1 Element | |
| Operating Temperature | -40°C~175°C TJ | |
| Published | 2012 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 280W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Configuration | Dual Boost Chopper | |
| Element Configuration | Dual | |
| Power - Max | 280W | |
| Input | Standard | |
| Collector Emitter Voltage (VCEO) | 1.2kV | |
| Max Collector Current | 80A | |
| Current - Collector Cutoff (Max) | 250μA | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Input Capacitance | 2.77nF | |
| Vce(on) (Max) @ Vge, Ic | 2.25V @ 15V, 50A | |
| IGBT Type | Trench Field Stop | |
| NTC Thermistor | Yes | |
| Gate-Emitter Voltage-Max | 20V | |
| Input Capacitance (Cies) @ Vce | 2.77nF @ 25V | |
| VCEsat-Max | 2.25 V | |
| RoHS Status | RoHS Compliant |
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