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APTGT35H120T3G Технические параметры

Microsemi Corporation  APTGT35H120T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 4 Elements
Operating Temperature -40°C~150°C TJ
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 208W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Свойство продукта Значение свойства
Pin Count 25
JESD-30 Code R-XUFM-X25
Configuration Full Bridge Inverter
Case Connection ISOLATED
Power - Max 208W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 55A
Current - Collector Cutoff (Max) 250μA
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 2.5nF
Turn On Time 140 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 35A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 2.5nF @ 25V
Radiation Hardening No
RoHS Status RoHS Compliant
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