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APTGT35X120T3G Технические параметры

Microsemi Corporation  APTGT35X120T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 32Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 6 Elements
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Power Dissipation 208W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Свойство продукта Значение свойства
Pin Count 25
JESD-30 Code R-XUFM-X25
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 208W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 55A
Current - Collector Cutoff (Max) 250μA
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 2.5nF
Turn On Time 140 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 35A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2.5nF @ 25V
VCEsat-Max 2.1 V
Radiation Hardening No
RoHS Status RoHS Compliant
Просмотр сходства
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