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APTGT50DDA120T3G Технические параметры

Microsemi Corporation  APTGT50DDA120T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Factory Lead Time 36 Weeks
Package / Case SP3
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Number of Pins 32Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 2 Elements
Operating Temperature -40°C~175°C TJ
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 270W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Свойство продукта Значение свойства
Pin Count 25
JESD-30 Code R-XUFM-X25
Configuration Dual Boost Chopper
Element Configuration Dual
Case Connection ISOLATED
Power - Max 270W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 75A
Current - Collector Cutoff (Max) 250μA
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 3.6nF
Turn On Time 140 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 3.6nF @ 25V
RoHS Status RoHS Compliant
Radiation Hardening No
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APTGT50DDA120T3G Документы

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