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APTGT75H60T1G Технические параметры

Microsemi Corporation  APTGT75H60T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 12Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 4 Elements
Operating Temperature -40°C~175°C TJ
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Power Dissipation 250W
Terminal Position UPPER
Свойство продукта Значение свойства
Terminal Form THROUGH-HOLE
Pin Count 12
Configuration Full Bridge Inverter
Case Connection ISOLATED
Power - Max 250W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 100A
Current - Collector Cutoff (Max) 250μA
Input Capacitance 4.62nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 75A
Turn Off Time-Nom (toff) 310 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 4.62nF @ 25V
VCEsat-Max 1.9 V
Radiation Hardening No
RoHS Status RoHS Compliant
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APTGT75H60T1G Документы

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