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APTM100H45SCTG Технические параметры
Microsemi Corporation APTM100H45SCTG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) | |
| Factory Lead Time | 22 Weeks | |
| Mount | Chassis Mount, Screw | |
| Mounting Type | Chassis Mount | |
| Package / Case | SP4 | |
| Number of Pins | 4Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 4 Elements | |
| Turn Off Delay Time | 121 ns | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Bulk | |
| Series | POWER MOS 7® | |
| Published | 1997 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 14Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN SILVER COPPER | |
| Additional Feature | AVALANCHE RATED | |
| Max Power Dissipation | 357W | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 14 | |
| Qualification Status | Not Qualified | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 357W | |
| Case Connection | ISOLATED | |
| Turn On Delay Time | 10 ns | |
| FET Type | 4 N-Channel (H-Bridge) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 540m Ω @ 9A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 4350pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 154nC @ 10V | |
| Rise Time | 12ns | |
| Drain to Source Voltage (Vdss) | 1000V 1kV | |
| Fall Time (Typ) | 35 ns | |
| Continuous Drain Current (ID) | 18A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Pulsed Drain Current-Max (IDM) | 72A | |
| DS Breakdown Voltage-Min | 1000V | |
| Avalanche Energy Rating (Eas) | 2500 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| RoHS Status | RoHS Compliant |
APTM100H45SCTG Документы
- DatasheetsPower Products Catalog APTM100H45SCTG
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