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APTM50AM24SG Технические параметры

Microsemi Corporation  APTM50AM24SG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 16 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 7Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 50 ns
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Power Dissipation 1.25kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 1.25kW
Case Connection ISOLATED
Turn On Delay Time 10 ns
Power - Max 1250W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 5V @ 6mA
Input Capacitance (Ciss) (Max) @ Vds 19600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 434nC @ 10V
Rise Time 17ns
Drain to Source Voltage (Vdss) 500V
Fall Time (Typ) 41 ns
Continuous Drain Current (ID) 150A
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 600A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 1300 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

APTM50AM24SG Документы

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