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Microsemi Corporation APTM50H15FT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 36 Weeks | |
| Mount | Chassis Mount, Screw | |
| Mounting Type | Chassis Mount | |
| Package / Case | SP1 | |
| Number of Pins | 1Pin | |
| Transistor Element Material | SILICON | |
| Number of Elements | 4 Elements | |
| Turn Off Delay Time | 80 ns | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Bulk | |
| Published | 2007 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 12Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Max Power Dissipation | 208W | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Pin Count | 12 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Configuration | COMPLEX | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 208W | |
| Case Connection | ISOLATED | |
| Turn On Delay Time | 29 ns | |
| FET Type | 4 N-Channel (H-Bridge) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 180m Ω @ 21A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 5448pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V | |
| Rise Time | 35ns | |
| Drain to Source Voltage (Vdss) | 500V | |
| Fall Time (Typ) | 26 ns | |
| Continuous Drain Current (ID) | 25A | |
| Gate to Source Voltage (Vgs) | 30V | |
| DS Breakdown Voltage-Min | 500V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |