ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply

APTM50H15FT1G Технические параметры

Microsemi Corporation  APTM50H15FT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 1Pin
Transistor Element Material SILICON
Number of Elements 4 Elements
Turn Off Delay Time 80 ns
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Max Power Dissipation 208W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 12
Свойство продукта Значение свойства
Configuration COMPLEX
Operating Mode ENHANCEMENT MODE
Power Dissipation 208W
Case Connection ISOLATED
Turn On Delay Time 29 ns
FET Type 4 N-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5448pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 35ns
Drain to Source Voltage (Vdss) 500V
Fall Time (Typ) 26 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 500V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Radiation Hardening No
RoHS Status RoHS Compliant

APTM50H15FT1G Документы

APTM50H15FT1G brand manufacturers: Microsemi Corporation, Anli stock, APTM50H15FT1G reference price.Microsemi Corporation. APTM50H15FT1G parameters, APTM50H15FT1G Datasheet PDF and pin diagram description download.You can use the APTM50H15FT1G Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find APTM50H15FT1G pin diagram and circuit diagram and usage method of function,APTM50H15FT1G electronics tutorials.You can download from the Anli.