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APTM50HM75STG Технические параметры

Microsemi Corporation  APTM50HM75STG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP4
Number of Pins 4Pins
Transistor Element Material SILICON
Number of Elements 4 Elements
Turn Off Delay Time 87 ns
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 14Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 357W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Свойство продукта Значение свойства
Pin Count 14
Operating Mode ENHANCEMENT MODE
Power Dissipation 357W
Case Connection ISOLATED
Turn On Delay Time 18 ns
FET Type 4 N-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 23A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V
Rise Time 35ns
Drain to Source Voltage (Vdss) 500V
Fall Time (Typ) 77 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.09Ohm
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 2500 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Radiation Hardening No
RoHS Status RoHS Compliant

APTM50HM75STG Документы

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