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APTM60H23FT1G Технические параметры

Microsemi Corporation  APTM60H23FT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 1Pin
Transistor Element Material SILICON
Number of Elements 4 Elements
Turn Off Delay Time 115 ns
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Max Power Dissipation 208W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 12
Свойство продукта Значение свойства
Configuration COMPLEX
Operating Mode ENHANCEMENT MODE
Power Dissipation 208W
Case Connection ISOLATED
Turn On Delay Time 37 ns
FET Type 4 N-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 276m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5316pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Rise Time 43ns
Drain to Source Voltage (Vdss) 600V
Fall Time (Typ) 34 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.23Ohm
DS Breakdown Voltage-Min 600V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Radiation Hardening No
RoHS Status RoHS Compliant
Просмотр сходства

APTM60H23FT1G Документы

APTM60H23FT1G brand manufacturers: Microsemi Corporation, Anli stock, APTM60H23FT1G reference price.Microsemi Corporation. APTM60H23FT1G parameters, APTM60H23FT1G Datasheet PDF and pin diagram description download.You can use the APTM60H23FT1G Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find APTM60H23FT1G pin diagram and circuit diagram and usage method of function,APTM60H23FT1G electronics tutorials.You can download from the Anli.