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JAN1N4107-1 Технические параметры
Microsemi Corporation JAN1N4107-1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Zener - Single | |
| Марка | ||
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) | |
| Factory Lead Time | 14 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | DO-204AH, DO-35, Axial | |
| Number of Pins | 2Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature | -65°C~175°C | |
| Packaging | Bulk | |
| Series | Military, MIL-PRF-19500/435 | |
| Published | 1999 | |
| Tolerance | ±5% | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN LEAD |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | METALLURGICALLY BONDED | |
| HTS Code | 8541.10.00.50 | |
| Max Power Dissipation | 480mW | |
| Terminal Form | WIRE | |
| Pin Count | 2 | |
| Reference Standard | MIL | |
| Polarity | UNIDIRECTIONAL | |
| Element Configuration | Single | |
| Diode Type | ZENER DIODE | |
| Current - Reverse Leakage @ Vr | 50nA @ 9.9V | |
| Power Dissipation | 480mW | |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 200mA | |
| Case Connection | ISOLATED | |
| Max Reverse Leakage Current | 50nA | |
| Impedance-Max | 200Ohm | |
| Test Current | 250μA | |
| Reference Voltage | 13V | |
| Zener Voltage | 13V | |
| Voltage Tol-Max | 5% | |
| Voltage Tolerance | 5% | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant |
JAN1N4107-1 Документы
- Datasheets1N4614-1~27-1e3, 1N4099-1~4135-1e3
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