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JAN1N5190 Технические параметры

Microsemi Corporation  JAN1N5190 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case B, Axial
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Bulk
Series Military, MIL-PRF-19500/420
Published 1997
JESD-609 Code e0
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Applications FAST RECOVERY POWER
Свойство продукта Значение свойства
HTS Code 8541.10.00.80
Terminal Form WIRE
Pin Count 2
Qualification Status Qualified
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 2μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.5V @ 9A
Case Connection ISOLATED
Forward Current 3A
Operating Temperature - Junction -65°C~175°C
Output Current-Max 3A
Forward Voltage 1.5V
Number of Phases 1Phase
Reverse Recovery Time 400 ns
Peak Reverse Current 2μA
Max Repetitive Reverse Voltage (Vrrm) 600V
Peak Non-Repetitive Surge Current 80A
Radiation Hardening No
RoHS Status Non-RoHS Compliant

JAN1N5190 Документы

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