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JAN1N5618US Технические параметры
Microsemi Corporation JAN1N5618US technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ||
| Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) | |
| Factory Lead Time | 8 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SQ-MELF, A | |
| Number of Pins | 2Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Packaging | Bulk | |
| Series | Military, MIL-PRF-19500/429 | |
| Published | 1997 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Max Operating Temperature | 125°C | |
| Min Operating Temperature | -55°C | |
| Additional Feature | METALLURGICALLY BONDED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| HTS Code | 8541.10.00.80 | |
| Terminal Position | END | |
| Terminal Form | WRAP AROUND | |
| Pin Count | 2 | |
| Qualification Status | Qualified | |
| Element Configuration | Single | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 500nA @ 600V | |
| Voltage - Forward (Vf) (Max) @ If | 1.3V @ 3A | |
| Case Connection | ISOLATED | |
| Operating Temperature - Junction | -65°C~200°C | |
| Output Current-Max | 1A | |
| Forward Voltage | 1.3V | |
| Max Reverse Voltage (DC) | 600V | |
| Average Rectified Current | 1A | |
| Reverse Recovery Time | 2 μs | |
| Peak Reverse Current | 500nA | |
| Max Repetitive Reverse Voltage (Vrrm) | 600V | |
| Peak Non-Repetitive Surge Current | 30A | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant |
JAN1N5618US Документы
- Datasheets1N5614US thru 1N5622US
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