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JAN1N5623US Технические параметры

Microsemi Corporation  JAN1N5623US technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SQ-MELF, A
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Bulk
Series Military, MIL-PRF-19500/429
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -65°C
HTS Code 8541.10.00.80
Terminal Position END
Terminal Form WRAP AROUND
Свойство продукта Значение свойства
Pin Count 2
Qualification Status Qualified
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 500nA @ 1000V
Voltage - Forward (Vf) (Max) @ If 1.6V @ 3A
Case Connection ISOLATED
Operating Temperature - Junction -65°C~175°C
Output Current-Max 1A
Voltage - DC Reverse (Vr) (Max) 1000V
Current - Average Rectified (Io) 1A
Forward Voltage 1.6V
Reverse Recovery Time 500 ns
Peak Reverse Current 500nA
Max Repetitive Reverse Voltage (Vrrm) 1kV
Capacitance @ Vr, F 15pF @ 12V 1MHz
Peak Non-Repetitive Surge Current 30A
Radiation Hardening No
RoHS Status Non-RoHS Compliant

JAN1N5623US Документы

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