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JAN1N5804 Технические параметры

Microsemi Corporation  JAN1N5804 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Lifecycle Status IN PRODUCTION (Last Updated: 2 weeks ago)
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case A, Axial
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Power Dissipation (Max) 3W
Packaging Bulk
Series Military, MIL-PRF-19500/477
Published 1997
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Applications ULTRA FAST RECOVERY POWER
Свойство продукта Значение свойства
Additional Feature HIGH RELIABILITY
HTS Code 8541.10.00.80
Terminal Form WIRE
Reference Standard MIL-19500
Qualification Status Qualified
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 1μA @ 100V
Voltage - Forward (Vf) (Max) @ If 975mV @ 2.5A
Case Connection ISOLATED
Operating Temperature - Junction -65°C~175°C
Forward Voltage 975mV
Max Reverse Voltage (DC) 100V
Average Rectified Current 2.5A
Number of Phases 1Phase
Reverse Recovery Time 25 ns
Peak Reverse Current 1μA
Max Repetitive Reverse Voltage (Vrrm) 100V
Capacitance @ Vr, F 25pF @ 10V 1MHz
Peak Non-Repetitive Surge Current 35A
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

JAN1N5804 Документы

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