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JAN1N5811US Технические параметры

Microsemi Corporation  JAN1N5811US technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Lifecycle Status IN PRODUCTION (Last Updated: 2 weeks ago)
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SQ-MELF, B
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Power Dissipation (Max) 5W
Packaging Bulk
Series Military, MIL-PRF-19500/477
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Applications ULTRA FAST RECOVERY
Additional Feature HIGH RELIABILITY
HTS Code 8541.10.00.80
Terminal Position END
Свойство продукта Значение свойства
Terminal Form WRAP AROUND
Pin Count 2
Reference Standard MIL-19500/477
Qualification Status Qualified
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 150V
Voltage - Forward (Vf) (Max) @ If 875mV @ 4A
Case Connection ISOLATED
Forward Current 6A
Operating Temperature - Junction -65°C~175°C
Output Current-Max 3A
Forward Voltage 875mV
Max Reverse Voltage (DC) 150V
Average Rectified Current 6A
Number of Phases 1Phase
Reverse Recovery Time 30 ns
Peak Reverse Current 5μA
Max Repetitive Reverse Voltage (Vrrm) 150V
Capacitance @ Vr, F 60pF @ 10V 1MHz
Peak Non-Repetitive Surge Current 125A
Radiation Hardening No
RoHS Status Non-RoHS Compliant

JAN1N5811US Документы

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