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JAN1N6627US Технические параметры

Microsemi Corporation  JAN1N6627US technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating Lead, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SQ-MELF, E
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Bulk
Series Military, MIL-PRF-19500/590
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Applications ULTRA FAST RECOVERY POWER
Additional Feature METALLURGICALLY BONDED
HTS Code 8541.10.00.80
Terminal Position END
Свойство продукта Значение свойства
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
Reference Standard MIL-19500/590F
Qualification Status Qualified
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 2μA @ 440V
Voltage - Forward (Vf) (Max) @ If 1.35V @ 1.2A
Case Connection ISOLATED
Forward Current 1.75A
Operating Temperature - Junction -65°C~150°C
Output Current-Max 4A
Forward Voltage 1.5V
Max Reverse Voltage (DC) 440V
Average Rectified Current 1.75A
Number of Phases 1Phase
Reverse Recovery Time 30 ns
Max Repetitive Reverse Voltage (Vrrm) 440V
Capacitance @ Vr, F 40pF @ 10V 1MHz
Peak Non-Repetitive Surge Current 75A
RoHS Status Non-RoHS Compliant

JAN1N6627US Документы

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