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JAN2N2222AL Технические параметры

Microsemi Corporation  JAN2N2222AL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time 23 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Series Military, MIL-PRF-19500/255
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Свойство продукта Значение свойства
HTS Code 8541.21.00.95
Max Power Dissipation 500mW
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Reference Standard MIL-19500/255
Qualification Status Qualified
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 500mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Base Voltage (VCBO) 75V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
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JAN2N2222AL Документы

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