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JAN2N2857 Технические параметры
Microsemi Corporation JAN2N2857 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Factory Lead Time | 23 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-72-3 Metal Can | |
| Number of Pins | 4Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature | -65°C~200°C TJ | |
| Packaging | Bulk | |
| Series | Military, MIL-PRF-19500/343 | |
| Published | 2007 | |
| JESD-609 Code | e0 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Qualification Status | Qualified | |
| Configuration | SINGLE | |
| Power - Max | 200mW | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Max Collector Current | 40mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3mA 1V | |
| Gain | 12.5dB ~ 21dB @ 450MHz | |
| Voltage - Collector Emitter Breakdown (Max) | 15V | |
| Frequency - Transition | 500MHz | |
| Power Dissipation-Max (Abs) | 0.2W | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B | |
| Collector-Base Capacitance-Max | 1pF | |
| Noise Figure (dB Typ @ f) | 4.5dB @ 450MHz | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant |
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