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JAN2N3251A Технические параметры

Microsemi Corporation  JAN2N3251A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3Pins
Transistor Element Material SILICON
Number of Elements 1 Element
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Series Military, MIL-PRF-19500/323
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 360mW
Свойство продукта Значение свойства
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Configuration SINGLE
Power Dissipation 360mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Turn On Time-Max (ton) 70ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant

JAN2N3251A Документы

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