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JAN2N3867 Технические параметры
Microsemi Corporation JAN2N3867 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) | |
| Factory Lead Time | 22 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AA, TO-5-3 Metal Can | |
| Number of Pins | 3Pins | |
| Number of Elements | 1 Element | |
| Operating Temperature | -65°C~200°C TJ | |
| Packaging | Bulk | |
| Series | Military, MIL-PRF-19500/350 | |
| Published | 2007 | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 1W | |
| Configuration | Single | |
| Power Dissipation | 1W | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 40V | |
| Max Collector Current | 3A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1.5A 2V | |
| Current - Collector Cutoff (Max) | 100μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 250mA, 2.5A | |
| Collector Base Voltage (VCBO) | 40V | |
| Emitter Base Voltage (VEBO) | 4V | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant |
JAN2N3867 Документы
- Datasheets2N386x(S)
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