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JAN2N4236 Технические параметры

Microsemi Corporation  JAN2N4236 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 22 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3Pins
Transistor Element Material SILICON
Number of Elements 1 Element
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Series Military, MIL-PRF-19500/580
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Свойство продукта Значение свойства
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Qualification Status Qualified
Polarity NPN
Configuration SINGLE
Power Dissipation 1W
Transistor Application AMPLIFIER
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 250mA 1V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status Non-RoHS Compliant

JAN2N4236 Документы

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