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JAN2N6770T1 Технические параметры

Microsemi Corporation  JAN2N6770T1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Package / Case TO-254-3, TO-254AA (Straight Leads)
Mounting Type Through Hole
Mount Through Hole
Number of Pins 3Pins
Transistor Element Material SILICON
Power Dissipation (Max) 4W Ta 150W Tc
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25℃ 12A Tc
Series Military, MIL-PRF-19500/543
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position SINGLE
Свойство продукта Значение свойства
Terminal Form PIN/PEG
Pin Count 3
Reference Standard MIL-19500
Qualification Status Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 500m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±20V
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.5Ohm
DS Breakdown Voltage-Min 500V
RoHS Status Non-RoHS Compliant
Radiation Hardening No
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JAN2N6770T1 Документы

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