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JANS2N5415 Технические параметры
Microsemi Corporation JANS2N5415 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) | |
| Factory Lead Time | 36 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AA, TO-5-3 Metal Can | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature | -65°C~200°C TJ | |
| Packaging | Bulk | |
| Series | Military, MIL-PRF-19500/485 | |
| Published | 2007 | |
| Pbfree Code | no | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 750mW | |
| Terminal Position | BOTTOM |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | WIRE | |
| Pin Count | 3 | |
| Reference Standard | MIL-19500/485H | |
| JESD-30 Code | O-MBCY-W4 | |
| Configuration | SINGLE | |
| Case Connection | COLLECTOR | |
| Power - Max | 750mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 200V | |
| Max Collector Current | 1A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA 10V | |
| Current - Collector Cutoff (Max) | 1mA | |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 5mA, 50mA | |
| Collector Base Voltage (VCBO) | 200V | |
| Turn Off Time-Max (toff) | 10000ns | |
| Turn On Time-Max (ton) | 1000ns | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant |
Индекс :
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