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JANS2N5665 Технические параметры
Microsemi Corporation JANS2N5665 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) | |
| Factory Lead Time | 33 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-213AA, TO-66-2 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 5A | |
| Operating Temperature | -65°C~200°C TJ | |
| Packaging | Bulk | |
| Series | Military, MIL-PRF-19500/455 | |
| Published | 2007 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| HTS Code | 8541.29.00.95 | |
| Max Power Dissipation | 2.5W | |
| Terminal Position | BOTTOM | |
| Terminal Form | PIN/PEG | |
| Pin Count | 3 | |
| Reference Standard | MIL | |
| JESD-30 Code | O-MBFM-P2 | |
| Qualification Status | Qualified | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 300V | |
| Max Collector Current | 5A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A 5V | |
| Current - Collector Cutoff (Max) | 200nA | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 5A | |
| Collector Base Voltage (VCBO) | 400V | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant |
JANS2N5665 Документы
- PCN Assembly/OriginJANS Dev Tag Print Chg 27/Nov/2017
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