Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
JANTX2N5012S Технические параметры
Microsemi Corporation JANTX2N5012S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Lifecycle Status | OBSOLETE (Last Updated: 3 weeks ago) | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AD, TO-39-3 Metal Can | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-39 (TO-205AD) | |
| Current-Collector (Ic) (Max) | 200mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | -65°C~200°C TJ | |
| Packaging | Bulk | |
| Series | Military, MIL-PRF-19500/727 | |
| Published | 2007 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Operating Temperature | 200°C | |
| Min Operating Temperature | -65°C | |
| Max Power Dissipation | 1W | |
| Polarity | NPN | |
| Power Dissipation | 1W | |
| Power - Max | 1W | |
| Transistor Type | NPN | |
| Max Collector Current | 200mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 25mA 10V | |
| Current - Collector Cutoff (Max) | 10nA ICBO | |
| Voltage - Collector Emitter Breakdown (Max) | 700V | |
| Collector Base Voltage (VCBO) | 700V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant |
JANTX2N5012S Документы
- PCN Obsolescence/ EOLMult Dev EOL 9/Jul/2018
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ