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JANTX2N930 Технические параметры
Microsemi Corporation JANTX2N930 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Lifecycle Status | IN PRODUCTION (Last Updated: 4 weeks ago) | |
| Factory Lead Time | 23 Weeks | |
| Contact Plating | Lead, Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-206AA, TO-18-3 Metal Can | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 45V | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~200°C TJ | |
| Packaging | Bulk | |
| Series | Military, MIL-PRF-19500/253 | |
| Published | 2002 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Max Power Dissipation | 300mW | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| Qualification Status | Qualified | |
| Configuration | SINGLE | |
| Power Dissipation | 300mW | |
| Case Connection | COLLECTOR | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 45V | |
| Max Collector Current | 30mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10μA 5V | |
| Current - Collector Cutoff (Max) | 2nA | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 500μA, 10mA | |
| Transition Frequency | 30MHz | |
| Collector Base Voltage (VCBO) | 60V | |
| Emitter Base Voltage (VEBO) | 6V | |
| RoHS Status | Non-RoHS Compliant |
JANTX2N930 Документы
- Datasheets2N930 JANTX2N930-Microsemi-datasheet-8383939.pdf
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