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JANTXV1N5552US Технические параметры

Microsemi Corporation  JANTXV1N5552US technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SQ-MELF, B
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Bulk
Series Military, MIL-PRF-19500/420
Published 1997
JESD-609 Code e0
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Applications POWER
HTS Code 8541.10.00.80
Terminal Position END
Terminal Form WRAP AROUND
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 235
Time@Peak Reflow Temperature-Max (s) 20
Reference Standard MIL-19500/420G
JESD-30 Code O-LELF-R2
Qualification Status Qualified
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 1μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 9A
Case Connection ISOLATED
Forward Current 5A
Operating Temperature - Junction -65°C~175°C
Output Current-Max 3A
Current - Average Rectified (Io) 3A
Number of Phases 1Phase
Reverse Recovery Time 2 μs
Peak Reverse Current 1μA
Max Repetitive Reverse Voltage (Vrrm) 600V
Peak Non-Repetitive Surge Current 100A
Radiation Hardening No
RoHS Status Non-RoHS Compliant

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